Defect Doping of InN
نویسندگان
چکیده
InN films grown by molecular beam epitaxy have been subjected to 2 MeV He + irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as grown films.
منابع مشابه
Temperature dependence of carrier lifetimes in InN
Time-resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10 to 10 cm. The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The te...
متن کاملSimulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by molecular beam epitaxy are reported. Growth details are described,the comparison enters the properties electric of InN/Si and AlGaN/Si photodectors with 0.2 μm of AlGaN and InN layers. Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band diagram, doping profile, conduction cu...
متن کاملStructural and elastic properties of InN and InAlN with different surface orientations and doping
Group−III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group−III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high−frequency and high power ...
متن کاملInN: A material with photovoltaic promise and challenges
The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics albeit in an inherently lattice mismatched material syste...
متن کاملBoron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
Related Articles Inelastic carrier lifetime in bilayer graphene Appl. Phys. Lett. 100, 032106 (2012) Carrier dynamics in bulk GaN J. Appl. Phys. 111, 023702 (2012) Photon recycling effect on electroluminescent refrigeration J. Appl. Phys. 111, 014511 (2012) Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy J. Appl....
متن کامل